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Single and Tandem Axial_p-i-n_Nanowire Photovoltaic Devices

热1 buptyanxin 添加于 2010-5-23 20:21 | 2380 次阅读 | 0 个评论

作者
Kempa TJ, Tian B, Kim DR, Hu J, Zheng X, Lieber CM
摘要
Nanowires represent a promising class of materials for exploring new concepts in solar energy conversion. Here we report the first experimental realization of axial modulation-doped p-i-n and tandem p-i-n+-p+-i-n silicon nanowire (SiNW) photovoltaic elements. Scanning electron microscopy images of selectively etched nanowires demonstrate excellent synthetic control over doping and lengths of distinct regions in the diode structures. Current-voltage (I-V) characteristics reveal clear and reproducible diode characteristics for the p-i-n and p-n SiNW devices. Under simulated one-sun solar conditions (AM 1.5G), optimized p-i-n SiNW devices exhibited an open circuit voltage (Voc) of 0.29 V, a maximum short-circuit current density of 3.5 mA/cm2, and a maximum efficiency of 0.5%. The response of the short-circuit current versus Voc under varying illumination intensities shows that the diode quality factor is improved from n ) 1.78 to n ) 1.28 by insertion of the i-type SiNW segment. The temperature dependence of Voc scales as -2.97 mV/K and extrapolates to the crystalline Si band gap at 0 K, which is in excellent agreement with bulk properties. Finally, a novel single SiNW tandem solar cell consisting of synthetic integration of two photovoltaic elements with an overall p-i-n+-p+-i-n structure was prepared and shown to exhibit a Voc that is on average 57% larger than that of the single p-i-n device. Fundamental studies of such well-defined nanowire photovoltaics will enable their intrinsic performance limits to be defined.
详细资料
- 文献种类: Journal Article
- 期刊名称: Nano Letters
- 期刊缩写: Nano Lett.
- 期卷页: 2008年第8卷第10期 3456-3460页
- ISBN: 1530-6984
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Single and Tandem Axial_p-i-n_Nanowire Photovoltaic Devices